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| BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD (A) .112 x 45 A O .630 NOM C E E D FEATURES: * PG = 13 dB min. at 15 W/1.6 MHz * d3 = -40 dB typ. at 15 W(PEP) * OmnigoldTM Metalization System BC B E G 1/4-28 UNF-2A F H MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG JC 4.0 A 85 V 4.0 V 36 V 88 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 1.99 C/W DIM A B C D E F G H MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO hFE fT CC GP d3 IC = 25 mA IC = 25 mA IC = 50 mA IE = 10 mA VCE = 6.0 V VCE = 20 V VCB = 30 V TC = 25 C NONETEST CONDITIONS RBE = 5.0 MINIMUM TYPICAL MAXIMUM 85 85 36 4.0 UNITS V V V V IC = 1.4 A IC = 3.0 A f = 1.0 MHz 15 250 115 13 100 --MHz 125 pF dB dB VCE = 28 V f = 1.6 MHz ICQ =2.0 A POUT = 15 W(PEP) -40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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